对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BZX84B27W-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):27, VZ @ IZT Min.(V):26.46, VZ @ IZT Max.(Ω):27.54, ZZT @ IZT Max.(mA):80, IZT(Ω):5 | - | |||||
BZX84B27-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):410, VZ(V):2, VZ @ IZT Nom.(V):27, VZ @ IZT Min.(V):26.46, VZ @ IZT Max.(Ω):27.54, ZZT @ IZT Max.(mA):80, IZT(Ω):5 | - | |||||
AD | BAT1502ELE6327XTMA1 | Infineon Technologies | 整流器/肖特基二极管,BAT15 - RF Mixer and Detector Schottky Diode | |||||
BZT52-B27S-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):27, VZ @ IZT Min.(V):26.46, VZ @ IZT Max.(Ω):27.54, ZZT @ IZT Max.(mA):80, IZT(Ω):5 | - | |||||
BZT52-B27-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):410, VZ(V):2, VZ @ IZT Nom.(V):27, VZ @ IZT Min.(V):26.46, VZ @ IZT Max.(Ω):27.54, ZZT @ IZT Max.(mA):80, IZT(Ω):5 | - |